PART |
Description |
Maker |
CBR06C160FAGAC |
CBR-SMD RF C0G, Ceramic, High Q, 16 pF, 1%, 250 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
CBR04C559B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 5.5 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
CBR06C910F5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 91 pF, 1%, 50 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
CBR06C169B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 1.6 pF, /-0.1 pF, 50 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
CBR02C110F5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 11 pF, 1%, 50 V, 0201, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
CBR06C110F5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 11 pF, 1%, 50 V, 0603, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
TCM1-ED8427 |
0.09 MHz - 505 MHz RF TRANSFORMER
|
MINI-CIRCUITS
|
HVC |
PC SMD 105∑C Very Low ESR High Ripple Current 2.000h Lifetime(Polymer SMD)
|
南通江海电容器股份有限公司
|
HCP |
PC SMD 105∑C Very Low ESR High Ripple Current 2.000h Lifetime(Polymer SMD)
|
南通江海电容器股份有限公司
|
CBR04C269B5GAC |
CBR-SMD RF C0G, Ceramic, High Q, 2.6 pF, /-0.1 pF, 50 V, 0402, C0G, SMD, Fixed, RF, Ultra High Q, Low ESR, Class I
|
Kemet Corporation
|
ISPLSI2064VE ISPLSI2064VE-100LB100 ISPLSI2064VE-10 |
3.3V In-System Programmable High Density SuperFAST?PLD 3.3VIn-SystemProgrammableHighDensitySuperFASTPLD 3.3V In-System Programmable High Density SuperFASTPLD EE PLD, 7 ns, PQFP44 CRYSTAL 16.0 MHZ 20PF SMD EE PLD, 13 ns, PQFP100 CRYSTAL 20.0 MHZ 20PF SMD RES 180K-OHM 1% 0.063W 200PPM THK-FILM SMD-0402 TR-7-PA2MM 3.3V In-System Programmable High Density SuperFAST PLD 3.3V In-System Programmable High Density SuperFAST⑩ PLD 3.3V In-System Programmable High Density SuperFAST?/a> PLD 280 MHz 3.3V in-system prommable superFAST high density PLD
|
Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
|
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